High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions

被引：57

作者：

Weinreb, S

Gaier, T

Lai, R

Barsky, M

Leong, YC

Samoska, L

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Univ Massachusetts, Dept Phys & Astron, Amherst, MA 01003 USA

[3] TRW Co Inc, Redondo Beach, CA 90277 USA

[4] Univ Massachusetts, Dept Elect Engn, Amherst, MA 01003 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 07期

基金：

美国国家航空航天局;

关键词：

InP; millimeter-wave; transistor amplifier; wave-guide transition;

D O I：

10.1109/75.774148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and measured results of a six-stage InP monolithic microwave integrated circuit (MMIC) amplifier with 20 +/- 6 dB gain from 150 to 215 GHz is reported. The MMIC has integral probes for direct coupling to 140-220 GHz WR-5 waveguide without bond wires or external transitions, This is the first amplifier operating above 140 GHz with sufficient gain to be useful as a single-chip amplifier and demonstrates the practicality of MMIC-based systems in this frequency range for use in radiometry, compact radars, and communication systems.

引用

页码：282 / 284

页数：3

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