Effects of oxygen on electron beam induced deposition of SiO2 using physisorbed and chemisorbed tetraethoxysilane

被引：10

作者：

Bishop, James ^{[1
]}

Toth, Milos ^{[1
]}

Phillips, Matthew ^{[1
]}

Lobo, Charlene ^{[1
]}

机构：

[1] Univ Technol, Sch Phys & Adv Mat, Broadway, NSW 2007, Australia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 21期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ACTIVATED CHEMISORPTION; GOLD NANOSTRUCTURES; TEMPERATURE; GROWTH; ADSORPTION; MECHANISM; KINETICS; SILICA; TEOS;

D O I：

10.1063/1.4767521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O-2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O-2 inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O-2 at room temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767521]

引用

页数：3

共 34 条

[1] Role of Activated Chemisorption in Gas-Mediated Electron Beam Induced Deposition [J].

Bishop, James ;

Lobo, Charlene J. ;

Martin, Aiden ;

Ford, Mike ;

Phillips, Matthew ;

Toth, Milos .

PHYSICAL REVIEW LETTERS, 2012, 109 (14)

[2] Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective [J].

Botman, A. ;

Mulders, J. J. L. ;

Hagen, C. W. .

NANOTECHNOLOGY, 2009, 20 (37)

[3] ACTIVATED CHEMISORPTION - INTERNAL DEGREES OF FREEDOM AND MEASURED ACTIVATION-ENERGIES [J].

BRASS, SG ;

EHRLICH, G .

PHYSICAL REVIEW LETTERS, 1986, 57 (20) :2532-2535

[4] In situ control of the focused-electron-beam-induced deposition process [J].

Bret, T ;

Utke, I ;

Bachmann, A ;

Hoffmann, P .

APPLIED PHYSICS LETTERS, 2003, 83 (19) :4005-4007

[5] ELECTRON-IMPACT DISSOCIATION OF OXYGEN [J].

COSBY, PC .

JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (12) :9560-9569

[6]

DANILATOS GD, 1988, ADV ELECTRON EL PHYS, V71, P109

[7] LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 [J].

DESHMUKH, SC ;

AYDIL, ES .

APPLIED PHYSICS LETTERS, 1994, 65 (25) :3185-3187

[8] INVESTIGATION OF SIO2 PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION THROUGH TETRAETHOXYSILANE USING ATTENUATED TOTAL-REFLECTION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY [J].

DESHMUKH, SC ;

AYDIL, ES .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (05) :2355-2367

[9] ON THE KINETICS OF CHEMISORPTION [J].

EHRLICH, G .

JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (05) :473-477

[10] ELECTRON-BEAM DEPOSITION OF GOLD NANOSTRUCTURES IN A REACTIVE ENVIRONMENT [J].

FOLCH, A ;

TEJADA, J ;

PETERS, CH ;

WRIGHTON, MS .

APPLIED PHYSICS LETTERS, 1995, 66 (16) :2080-2082

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