In-situ Raman spectroscopy used to study and control the initial growth phase of microcrystalline absorber layers for thin-film silicon solar cells

被引：4

作者：

Muthmann, Stefan ^{[1
]}

Koehler, Florian ^{[1
]}

Meier, Matthias ^{[1
]}

Huelsbeck, Markus ^{[1
]}

Carius, Reinhard ^{[1
]}

Gordijn, Aad ^{[1
]}

机构：

[1] Forschungszentrum Julich, Photovolta IEK5, D-52425 Julich, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 17期

关键词：

Microcrystalline silicon; Raman spectroscopy; PECVD; In-situ; TRANSIENT DEPLETION; CRYSTALLINE SILICON; DEPOSITION; HYDROGEN; DILUTION;

D O I：

10.1016/j.jnoncrysol.2011.12.061

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The continuous deposition of microcrystalline silicon has been monitored with in-situ Raman spectroscopy. The process and measurement settings were chosen such that one spectrum was taken during approximately 9 nm of layer growth. This allows observing the crystallinity in the initial growth phase of microcrystalline silicon absorber layers. The influence of different p-doped seed layers has been studied. Under constant deposition conditions, an initial decrease in crystallinity was observed over the first tens of nanometers. By profiling the process gas flows during the initial phase it was possible to reduce the amount of amorphous material that was detected during the initial phase of deposition. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1970 / 1973

页数：4

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