Carrier mobility in strained Ge nanowires

被引：31

作者：

Niquet, Yann-Michel ^{[1
]}

Delerue, Christophe ^{[2
]}

机构：

[1] INAC, UMR E CEA UJF Grenoble 1, SP2M, L Sim, Grenoble, France

[2] UMR CNRS 8520, IEMN Dept ISEN, Lille, France

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 08期

关键词：

FIELD-EFFECT TRANSISTORS; GERMANIUM NANOWIRES; SI;

D O I：

10.1063/1.4759346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present fully atomistic calculations of the electron and hole mobilities in Ge nanowires with diameter up to 10 nm. We show that the phonon-limited mobility is strongly dependent on the diameter and on the orientation of the nanowire, and is also very responsive to unaxial strains. The similarities and differences with the case of Si nanowires are highlighted. In strained Ge nanowires, the mobility can reach >3000 cm(2)/V/s for electrons and 12 000 cm(2)/V/s for holes. Ge nanowires are therefore promising nanostructures for ultimate electronic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759346]

引用

页数：4

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