Non-selenization method using sputtering deposition with a CuSe2 target for CIGS thin film

被引：18

作者：

Kim, Nam-Hoon ^{[1
]}

Oh, Seongha ^{[1
]}

Lee, Woo-Sun ^{[1
]}

机构：

[1] Chosun Univ, Dept Elect Engn, Kwangju 501759, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 61卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

CIGS; CuSe2; Non-selenization; Sputtering; SOLAR-CELL; PHOTOVOLTAIC APPLICATIONS; OPTICAL-PROPERTIES; CU(IN; GA)SE-2;

D O I：

10.3938/jkps.61.1177

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel method is proposed to prepare polycrystalline Cu(In,Ga)Se-2 (CIGS) thin films by using a non-selenization method and a sputtering process with In, Ga and CuSe2 alloy targets. An annealing process in a furnace and rapid thermal annealing (RTA) at 400 A degrees C without any selenium-/sulfurcontaining gas formed CIGS chalcopyrite (112), (220)/(204), and (312)/(116) phases. The major electrical and optical properties of the annealed thin films were superior to the required or reported values with 2.33 x 10(3) S/cm conductivity, 4.43 x 10(20) cm(-3) carrier concentration, 34.30 cm(2)/Vs hole mobility, and 2.41 x 10(6) cm(-1) absorption coefficient.

引用

页码：1177 / 1180

页数：4

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