Conducting channel at the LaAlO3/SrTiO3 interface

被引：14

作者：

Huang, Z. ^{[1
]}

Wang, X. Renshaw ^{[1
,2
]}

Liu, Z. Q. ^{[1
,2
]}

Lu, W. M. ^{[1
,3
]}

Zeng, S. W. ^{[1
,2
]}

Annadi, A. ^{[1
,2
]}

Tan, W. L. ^{[2
]}

Qiu, X. P. ^{[3
]}

Zhao, Y. L. ^{[1
,2
]}

Salluzzo, M. ^{[4
]}

Coey, J. M. D. ^{[1
,5
,6
]}

Venkatesan, T. ^{[1
,2
,3
]}

Ariando ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117411, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[4] CNR, SPIN, I-80126 Naples, Italy

[5] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[6] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

2-DIMENSIONAL ELECTRON-GAS; SUPERCONDUCTIVITY; FERROMAGNETISM; COEXISTENCE;

D O I：

10.1103/PhysRevB.88.161107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Localization of electrons in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO3 were grown on NdGaO3 (110) substrates and capped with LaAlO3. When the SrTiO3 thickness is <= 6 unit cells, most electrons at the interface are localized, but when the number of SrTiO3 layers is 8-16, the free carrier density approaches 3.3x10(14) cm(-2), the value corresponding to charge transfer of 0.5 electrons per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO3 thickness is >= 20 unit cells. The similar to 4 nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.

引用

页数：5

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