Reactivity of acid generators for chemically amplified resists with low-energy electrons

被引：49

作者：

Nakano, A

Kozawa, T

Tagawa, S

Szreder, T

Wishart, JF

Kai, T

Shimokawa, T

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Brookhaven Natl Lab, Dept Chem, Upton, NY 11973 USA

[3] JSR Corp, Yokaichi, Mie 5108552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 4-7期

关键词：

acid generator; reactivity; chemically amplified resist; electron beam lithography; EUV lithography;

D O I：

10.1143/JJAP.45.L197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In chemically amplified resists for ionizing radiations such as electron beams and extreme ultraviolet (EUV), low-energy electrons play an important role in the pattern formation processes. The reactivity of acid generators with low-energy electrons was evaluated using solvated electrons in tetrahydrofuran, which were generated by a pulsed electron beam. The rate constants of acid generators with the solvated electrons ranged from 0.6 to 1.9 x 10(11) M-1 s(-1).

引用

页码：L197 / L200

页数：4

共 32 条

[1]

[Anonymous], RAD CHEM PRESENT STA

[2] APPLICATION OF SILICON POLYMER AS POSITIVE PHOTOSENSITIVE MATERIAL [J].