Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

被引：21

作者：

Lee, PS ^{[1
]}

Mangelinck, D

Pey, KL

Ding, J

Chi, DZ

Osipowicz, T

Dai, JY

See, A

机构：

[1] Natl Univ Singapore, Dept Mat Sci, Singapore 119260, Singapore

[2] Fac Sci & Tech St Jerome, CNRS, L2MP, F-13397 Marseille 20, France

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117548, Singapore

[4] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 117548, Singapore

[5] Natl Univ Singapore, Dept Phys, Res Ctr Nucl Microscopy, Singapore 117548, Singapore

[6] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 60卷 / 1-2期

关键词：

Ni(Pt)Si; Ni silicidation; RTCVD; LPCVD; layer inversion;

D O I：

10.1016/S0167-9317(01)00592-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2, was found at 700degreesC, which is slightly lower than that on monocrystalline Si (about 750degreesC). With Pt addition, Ni(Pt)Si was found up to 800degreesC, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：171 / 181

页数：11

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