Large Signal Model of AlGaN/GaN High Electron Mobility Transistor

被引：0

作者：

Jiang Xia ^{[1
]}

Yang Ruixia ^{[1
]}

Zhao Zhengping ^{[2
]}

Zhang Zhiguo ^{[2
]}

Feng Zhihong ^{[2
]}

机构：

[1] Hebei Univ Technol, Coll Informat Engn, Tianjin 300130, Peoples R China

[2] CETC, Res Inst 13, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China

来源：

APPLIED INFORMATICS AND COMMUNICATION, PT 5 | 2011年 / 228卷

关键词：

AlGaN/GaN HEMT large signal model ADS MMIC;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A accurate nonlinear large signal model was extracted in this paper. The model is capable of correctly modeling the DC characteristics of AlGaN/GaN HEMT. The parameters of model are obtained from a series of pulsed I-V characteristics and S parameters adopting the on-wafer testing technique and narrow pulse testing technology. The model is implemented in ADS software, simulations and measurements data show its availability and can be used for GaN MMIC's designing.

引用

页码：544 / +

页数：3

共 6 条

[1] Barker A.E., 1997, IEEE T MICROW THEORY, V45, P1563
[2] Behtash R., 2004, IEEE MTTS INT MICROW, V3, P1657
[3] Chen Yanhua, 2008, DETAILED APPL ADS DE
[4] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT
DAMBRINE, G
CAPPY, A
HELIODORE, F
PLAYEZ, E
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) : 1151 - 1159
[5] A physics-based frequency dispersion model of GaN MESFETs
Islam, SS
Anwar, AEM
Webster, RT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) : 846 - 853
[6] Zhang S., 2006, CHINESE J SEMICONDUC, V28, P439

← 1 →