The influence of the top-contact metal on the ferroelectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films

被引:93
作者
Pintilie, Lucian [1 ,2 ]
Vrejoiu, Ionela [1 ]
Hesse, Dietrich [1 ]
Alexe, Marin [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany
[2] NIMP, Bucharest 077125, Romania
关键词
D O I
10.1063/1.3021293
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical properties, i.e., dielectric hysteresis and leakage current, of epitaxial Pb(Zr0.2Ti0.8)O-3 films with bottom SrRuO3 electrode and different metals as top contact were investigated. The leakage current is largely insensitive to the work function of the top metal but increases with decreasing electronegativity as well as with decreasing number of electrons on the d-shell of the top metal. The best rectifying properties are obtained for metals with complete d-shell (Cu, Au, Ag, Pd), while the metals with few electrons on the d-shell (Ta, Cr) form Ohmic-like contacts. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3021293]
引用
收藏
页数:6
相关论文
共 35 条
[1]   ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES [J].
COHEN, RE .
NATURE, 1992, 358 (6382) :136-138
[2]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[3]   ELECTRICAL-PROPERTIES OF PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS WITH HIGH LINEAR DIELECTRIC PERMITTIVITY - SCHOTTKY AND OHMIC CONTACTS [J].
DEY, SK ;
LEE, JJ ;
ALLURI, P .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A) :3142-3152
[4]   COMPOUNDS WITH HEXAGONAL BARIUM TITANATE STRUCTURE [J].
DICKSON, JG ;
KATZ, L ;
WARD, R .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1961, 83 (14) :3026-&
[5]   Ruthenium oxide and strontium ruthenate electrodes for ferroelectric thin-films capacitors [J].
Hartmann, AJ ;
Neilson, M ;
Lamb, RN ;
Watanabe, K ;
Scott, JF .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (02) :239-242
[6]   Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications [J].
Kingon, AI ;
Srinivasan, S .
NATURE MATERIALS, 2005, 4 (03) :233-237
[7]   Effect of film thickness on the ferroelectric properties of Pb(Zr0.2Ti0.8)O3 thin films for nano-data storage applications [J].
Lee, WS ;
Ahn, KC ;
Yoon, SG ;
Kim, CS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05) :1901-1904
[8]  
Lide DR, 1995, CRC HDB CHEM PHYS, P76
[9]   Dynamic leakage current compensation in ferroelectric thin-film capacitor structures [J].
Meyer, R ;
Waser, R ;
Prume, K ;
Schmitz, T ;
Tiedke, S .
APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3
[10]   DEVICE MODELING OF FERROELECTRIC CAPACITORS [J].
MILLER, SL ;
NASBY, RD ;
SCHWANK, JR ;
RODGERS, MS ;
DRESSENDORFER, PV .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6463-6471