Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

被引：62

作者：

Liu, Han-Yin ^{[1
,2
,3
]}

Chou, Bo-Yi ^{[1
,2
,3
]}

Hsu, Wei-Chou ^{[1
,2
,3
]}

Lee, Ching-Sung ^{[4
]}

Sheu, Jinn-Kong ^{[3
,5
]}

Ho, Chiu-Sheng ^{[1
,2
,3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[5] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 01期

关键词：

AlGaN/GaN; gate dielectric; H2O2; oxidation; metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) (MOS-HEMT); surface passivation; ELECTRON-MOBILITY TRANSISTORS; SURFACE PASSIVATION; VOLTAGE; GAN; FABRICATION; MECHANISMS; BREAKDOWN; AL2O3; SIN;

D O I：

10.1109/TED.2012.2227325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H2O2) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.

引用

页码：213 / 220

页数：8

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