This paper presents time-resolved optically stimulated luminescence (TR-OSL) experiments in the important dosimetric material Al2O3:C. During these experiments short pulses (0.5 s) of light from blue LEDs (470 nm) are followed by relaxation periods (2.5 s) of the charge carriers at different stimulation temperatures. During the pulse excitation period the integrated TR-OSL signal increases with the stimulation temperature between 50 and 150 degrees C, while between 160 and 240 degrees C the signal intensity decreases. This behavior is interpreted to arise from competing effects of thermal assistance (activation energy, E-th=0.067 + 0.002 eV) and thermal quenching (activation energy W=(1.032+0.005) eV). Changes in the shape of the TR-OSL curves were analyzed at different stimulation temperatures using analytical expressions available in the literature. The TR-OSL signals contain a slower temperature-dependent phosphorescence signal, the "delayed-OSL" described previously for this material. The temperature dependent luminescence lifetimes obtained from analysis of the optical stimulation period are identical to those obtained from the corresponding relaxation period. However, the values of these luminescence lifetimes are systematically higher than previously reported values from time-resolved photoluminescence (TR-PL) studies carried out in this important dosimetric material. These results are discussed within the context of a recently published kinetic model. (C) 2012 Elsevier B.V. All rights reserved.
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
Yang, Xin-Bo
Li, Hong-Jun
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
Li, Hong-Jun
Bi, Qun-Yu
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
Bi, Qun-Yu
Cheng, Yan
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Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
Cheng, Yan
Tang, Qiang
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Zhongshan Univ, Dept Phys, Guangzhou 510275, Guangdong, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
Tang, Qiang
Xu, Jun
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
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Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USAOklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
Shrestha, N.
Yukihara, E. G.
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Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
Paul Scherrer Inst, Dept Radiat Safety & Secur, 111 Forsch Str, CH-5232 Villigen, SwitzerlandOklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
Yukihara, E. G.
Cusumano, Davide
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Fdn Policlin Univ A Gemelli IRCCS, UOC Radioterapia Oncol, Dipartimento Diagnost Immagini Radioterapia Oncol, Rome, ItalyOklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
Cusumano, Davide
Placidi, Lorenzo
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Fdn Policlin Univ A Gemelli IRCCS, UOC Radioterapia Oncol, Dipartimento Diagnost Immagini Radioterapia Oncol, Rome, ItalyOklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA