Hydrodynamic simulation of silicon ablation by ultrashort laser irradiation

被引:15
作者
Ding, P. J. [1 ]
Liu, Q. C. [1 ]
Lu, X. [1 ]
Liu, X. L. [1 ,2 ]
Sun, S. H. [1 ]
Liu, Z. Y. [1 ]
Hu, B. T. [1 ]
Li, Y. H. [1 ]
机构
[1] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China
[2] 91991 Peoples Liberat Army Troops, Zhoushan 316000, Peoples R China
关键词
Hydrodynamic simulation; Laser silicon ablation; Ultrashort laser; PULSES; FEMTOSECOND; METALS; DIELECTRICS; THRESHOLDS; PICOSECOND; EFFICIENCY; EXPANSION;
D O I
10.1016/j.nimb.2011.12.027
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Ultrashort (10 fs-100 ps) pulse laser ablation of pure silicon in vacuum was simulated by using a modified self-consistent one-dimensional hydrodynamic code to study the fundamental ablation mechanisms. The presented results provide a guide for drilling periodic microholes or microgratings on the dense insulator surface. The simulated laser ablation threshold remains nearly constant in femto-second regime, and increases as the square root of pulse duration in picosecond regime. The ablation depth as a function of pulse duration shows four different regimes and the ablation depth reaches a minimum when the pulse duration is similar to 30 ps at various laser fluences. The influence of laser-induced plasma shielding on ablation depth was also studied. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:40 / 44
页数:5
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