Anisotropy of the porous silicon photoluminescence

被引：0
|
作者：
Polisski, G
Averboukh, B
Kovalev, D
Koch, F
机构：
来源：
ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996 | 1997年 / 452卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polarization memory effect in the porous Si photoluminescence is studied. The anisotropy of the linear polarization degree is found in the samples etched with polarized light-assistance. The effect is explained by the anisotropic in plane distribution of the elongated Si crystallites. Under resonant optical excitation four-fold anisotropy of the photoluminescence polarization, linked to the crystalline axes of the bulk Si substrate, is observed.
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页码：541 / 546
页数：6
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