Electrical characteristics of contacts to thin film N-polar n-type GaN

被引：65

作者：

Kim, Hyunsoo ^{[1
,2
,3
]}

Ryou, Jae-Hyun ^{[1
,2
]}

Dupuis, Russell D. ^{[1
,2
]}

Lee, Sung-Nam ^{[3
,4
]}

Park, Yongjo ^{[3
]}

Jeon, Joon-Woo ^{[5
]}

Seong, Tae-Yeon ^{[5
]}

机构：

[1] Georgia Inst Technol, Ctr Cpds Semicond, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Samsung Electromech Co, Opto Syst Lab, Suwon 443743, South Korea

[4] Silla Univ, Dept Engn Energy & Appl Chem, Pusan 617736, South Korea

[5] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

annealing; etching; gallium compounds; III-V semiconductors; impurities; platinum; Schottky barriers; semiconductor thin films;

D O I：

10.1063/1.3013838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of metallization contacts to a thin film N-polar n-type GaN layer fabricated by a laser lift-off process combined with a dry etching are investigated. It is shown that for Pt Schottky contacts, the Schottky barrier height of the N-polar GaN is 1.27 eV, which is larger than that (1.23 eV) of reference Ga-polar GaN. Ti/Al Ohmic contacts to the N-polar GaN experience thermal degradation even at 400 degrees C. Such annealing-induced degradation is explained in terms of the presence of the complex surface states of the N-polar GaN, which consists of impurities and process-induced donorlike and acceptorlike defects.

引用

页数：3

共 15 条

[1] Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy [J].

Chevtchenko, S ;

Ni, X ;

Fan, Q ;

Baski, AA ;

Morkoç, H .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[2] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[3] Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition [J].

Jang, HW ;

Lee, JH ;

Lee, JL .

APPLIED PHYSICS LETTERS, 2002, 80 (21) :3955-3957

[4] Schottky barrier characteristics of Pt contacts to n-type InGaN [J].

Jang, JS ;

Kim, D ;

Seong, TY .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (07)

[5] Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN [J].

Jang, JS ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2743-2745

[6] Influence of crystal polarity on the properties of Pt/GaN Schottky diodes [J].

Karrer, U ;

Ambacher, O ;

Stutzmann, M .

APPLIED PHYSICS LETTERS, 2000, 77 (13) :2012-2014

[7] Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry [J].

Kim, Hyunsoo ;

Kim, Kyoung-Kook ;

Choi, Kwang-Ki ;

Kim, Hyungkun ;

Song, June-O ;

Cho, Jaehee ;

Baik, Kwang Hyeon ;

Sone, Cheolsoo ;

Park, Yongjo ;

Seong, Tae-Yeon .

APPLIED PHYSICS LETTERS, 2007, 91 (02)

[8] Metallization contacts to nonpolar a-plane n-type GaN [J].

Kim, Hyunsoo ;

Lee, Sung-Nam ;

Park, Yongjo ;

Kwak, Joon Seop ;

Seong, Tae-Yeon .

APPLIED PHYSICS LETTERS, 2008, 93 (03)

[9] Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate [J].

Kwak, JS ;

Lee, KY ;

Han, JY ;

Cho, J ;

Chae, S ;

Nam, OH ;

Park, Y .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3254-3256

[10] Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN [J].

Luther, BP ;

DeLucca, JM ;

Mohney, SE ;

Karlicek, RF .

APPLIED PHYSICS LETTERS, 1997, 71 (26) :3859-3861

← 1 2 →