Multilevel resistive switching in ternary HfxAl1-xOy oxide with graded Al depth profile

被引：28

作者：

Markeev, A. ^{[1
]}

Chouprik, A. ^{[1
]}

Egorov, K. ^{[1
]}

Lebedinskii, Yu. ^{[2
]}

Zenkevich, A. ^{[1
,2
,3
]}

Orlov, O. ^{[4
]}

机构：

[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

[2] NRNU Moscow Engn Phys Inst, Moscow 115409, Russia

[3] NBICS Ctr, NRC Kurchatov Inst, Moscow 123182, Russia

[4] Res Inst Mol Elect, Moscow 124460, Russia

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

Resistive switching; Gradient HfxAl1-xOy dielectrics; Electronic synapse; ATOMIC LAYER DEPOSITION; THIN-FILMS; MEMORY;

D O I：

10.1016/j.mee.2013.03.084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, HfxAl1-xOy, films with graded Al depth profile are grown by atomic layer deposition (ALD). HfxAl1-xOy based Pt/HfxAl1-xO/TiN stacks exhibit multilevel resistive switching behavior as revealed by I-V measurements. The distribution of the charged oxygen vacancies across as grown graded HfxAl1-xOy layer on Pt underlayer is evident from the X-ray photoemission spectroscopy analysis. The resistance switching in the graded HfxAl1-xOy layer is described in terms of the redistribution of the charged oxygen vacancies following the external biasing of the opposite polarities. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：342 / 345

页数：4

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