High performance optically pumped antimonide lasers operating in the 2.4-9.3 μm wavelength range -: art. no. 041122

被引：31

作者：

Kaspi, R ^{[1
]}

Ongstad, AP

Dente, GC

Chavez, JR

Tilton, ML

Gianardi, DM

机构：

[1] USAF, Res Lab, Directed Energy Directorate, Adv Tact Syst Branch AFRL DELS, Kirtland AFB, NM 87117 USA

[2] Boeing Co, Def & Space Grp, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.2170423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We provide an update on the further development of optically pumped semiconductor lasers based on the InAs/InGaSb/InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the similar to 2.4 mu m to similar to 9.3 mu m range with consistently high photon-to-photon conversion rates. (c) 2006 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 13 条

[11] Gain and loss in an optically pumped mid-infrared laser [J].