High performance optically pumped antimonide lasers operating in the 2.4-9.3 μm wavelength range -: art. no. 041122

被引：31

作者：

Kaspi, R ^{[1
]}

Ongstad, AP

Dente, GC

Chavez, JR

Tilton, ML

Gianardi, DM

机构：

[1] USAF, Res Lab, Directed Energy Directorate, Adv Tact Syst Branch AFRL DELS, Kirtland AFB, NM 87117 USA

[2] Boeing Co, Def & Space Grp, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.2170423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We provide an update on the further development of optically pumped semiconductor lasers based on the InAs/InGaSb/InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the similar to 2.4 mu m to similar to 9.3 mu m range with consistently high photon-to-photon conversion rates. (c) 2006 American Institute of Physics.

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页码：1 / 3

页数：3

相关论文

共 13 条

[1]

BEWLEY WW, 2005, P PHOT W C SAN JOS C, P13101

[2] Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers [J].

Dente, GC ;

Tilton, ML .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1420-1429

[3] Low confinement factors for suppressed filaments in semiconductor lasers [J].

Dente, GC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (12) :1650-1653

[4] Continuous-wave operation of λ∼4.8 μm quantum-cascade lasers at room temperature [J].

Evans, A ;

Yu, JS ;

Slivken, S ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2166-2168

[5] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[6] MOLECULAR-BEAM EPITAXY GROWTH OF SEMICONDUCTOR HETEROSTRUCTURE OPTICAL CONVERTER LASERS USING THE INGAAS/ALGAAS MATERIALS SYSTEM [J].

GOODHUE, WD ;

LE, HQ ;

DICECCA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :948-951

[7]

Goyal AK, 2001, IEEE LEOS ANN MTG, P200, DOI 10.1109/LEOS.2001.969242

[8] High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement [J].

Kaspi, R ;

Ongstad, A ;

Dente, GC ;

Chavez, J ;

Tilton, ML ;

Gianardi, D .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :406-408

[9] Digital alloy growth in mixed As/Sb heterostructures [J].

Kaspi, R ;

Donati, GP .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :515-520

[10] High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers [J].

Kim, JG ;

Shterengas, L ;

Martinelli, RU ;

Belenky, GL .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1926-1928