Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors

被引:127
作者
Takahashi, Y [1 ]
Hasegawa, T
Abe, Y
Tokura, Y
Saito, G
机构
[1] AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan
[2] Hokkaido Univ, Grad Sch Environm Earth Sci, Sapporo, Hokkaido 0600810, Japan
[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[4] Kyoto Univ, Grad Sch Sci, Div Chem, Kyoto 6068502, Japan
关键词
D O I
10.1063/1.2173226
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fine control of p-, n-, and ambipolar-type field-effect transistor (FET) operations is successfully demonstrated in prototypical single-crystal organic FETs with use of chemically tunable nature of Fermi energy in tetrathiafulvalene-tetracyanoguinodimethane-based organic metal electrodes. Carrier-type preference and rectifying nature in the organic-organic contacts are revealed in terms of the FET operations as well as of the all-organic Schottky diode characteristics.
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页数:3
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