Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

被引：0

作者：

Lee, JH ^{[1
]}

Shin, KS ^{[1
]}

Park, JH ^{[1
]}

Han, MK ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn, Seoul 151742, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷

关键词：

hysteresis; amorphous silicon; organic light-emitting diode;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated-amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)(th) frame affects the OLED current in the (n)(th) frame.

引用

页码：S76 / S79

页数：4

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