Self-interstitial clusters in silicon

被引:19
作者
Eberlein, TAG
Pinho, N [1 ]
Jones, R
Coomer, BJ
Goss, JP
Briddon, PR
Öberg, S
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Lulea Univ Technol, Dept Math, S-97187 Lulea, Sweden
[3] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
关键词
interstitials; AA12; P6; ab initio theory;
D O I
10.1016/S0921-4526(01)00723-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Although there have been made many calculations for structures of the self-interstitial in Si and small aggregates of interstitials, I-n, there have been relatively few attempts to relate these defects with experimental data. Here, we discuss the assignments of the self-interstitial to the AA12 EPR centre and the di-interstitial to the P6 EPR centre. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:454 / 457
页数:4
相关论文
共 14 条
[1]  
COOMER BJ, 2000, THESIS U EXETER
[2]   Oxygen and dioxygen centers in Si and Ge:: Density-functional calculations [J].
Coutinho, J ;
Jones, R ;
Briddon, PR ;
Öberg, S .
PHYSICAL REVIEW B, 2000, 62 (16) :10824-10840
[3]   Energetics of self-interstitial clusters in Si [J].
Cowern, NEB ;
Mannino, G ;
Stolk, PA ;
Roozeboom, F ;
Huizing, HGA ;
van Berkum, JGM ;
Cristiano, F ;
Claverie, A ;
Jaraíz, M .
PHYSICAL REVIEW LETTERS, 1999, 82 (22) :4460-4463
[4]   Unexpected dynamics for self-interstitial clusters in silicon [J].
Estreicher, SK ;
Gharaibeh, M ;
Fedders, PA ;
Ordejon, P .
PHYSICAL REVIEW LETTERS, 2001, 86 (07) :1247-1250
[5]  
Jones R, 1998, SEMICONDUCT SEMIMET, V51, P287
[6]   Thermally activated reorientation of di-interstitial defects in silicon [J].
Kim, J ;
Kirchhoff, F ;
Aulbur, WG ;
Wilkins, JW ;
Khan, FS ;
Kresse, C .
PHYSICAL REVIEW LETTERS, 1999, 83 (10) :1990-1993
[7]   First-principles study of the self-interstitial diffusion mechanism in silicon [J].
Lee, WC ;
Lee, SG ;
Chang, KJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (05) :995-1002
[8]   Silicon di-interstitial in ion-implanted silicon [J].
Lee, YH .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1119-1121
[9]   EPR STUDY OF NEUTRON-IRRADIATED SILICON - POSITIVE CHARGE STATE OF (100) SPLIT DI-INTERSTITIAL [J].
LEE, YH ;
GERASIMENKO, NN ;
CORBETT, JW .
PHYSICAL REVIEW B, 1976, 14 (10) :4506-4520
[10]  
Mukashev BN, 1998, PHYS STATUS SOLIDI A, V168, P73, DOI 10.1002/(SICI)1521-396X(199807)168:1<73::AID-PSSA73>3.0.CO