Lithography-free fabrication of single crystalline silicon tubular nanostructures on large area

被引：2

作者：

Jung, Hak-Kyun ^{[2
]}

Choi, Jungwook ^{[2
]}

Na, Hyungjoo ^{[2
]}

Kwon, Dae-Sung ^{[2
]}

Kim, Min-Ook ^{[2
]}

Kang, Jeong-Jin ^{[1
]}

Kim, Jongbaeg ^{[2
]}

机构：

[1] Korea Inst Ind Technol 1271 18, Adv Convergent Technol R&D Grp, Ansan 426910, Gyeonggi Do, South Korea

[2] Yonsei Univ, Sch Mech Engn, Seoul 120749, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 98卷

基金：

新加坡国家研究基金会;

关键词：

Single crystalline; Tubular nanostructure; Surface-to-volume ratio; Lithography-free; SI NANOWIRE ARRAYS; PERFORMANCE; NANOTUBES; GROWTH;

D O I：

10.1016/j.mee.2012.07.079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method to fabricate single-crystalline silicon tubular nanostructures on large area was developed. Utilizing the thermal dewetting of a thin metal film, redeposition of dewetted metal nanodots, and etch selectivity between silicon substrate and metal masks, the tubular nanostructures were formed from single crystalline silicon substrate on large area without using any nano-patterning process. This lithography-free fabrication method composed only of sputtering, rapid thermal process and reactive ion etch (RIE) is simple and cost effective batch-process. The transmission electron microscopic inspection revealed that the silicon tubular nanostructures are in the range of 1 pm in length, 250 mu m in diameter, 75 nm in wall-thickness and 380 nm in hollow-depth. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：325 / 328

页数：4

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