Resonant Raman scattering by 2LO-phonons in semiconductors with equal effective masses of electrons and holes

被引:0
|
作者
Semenova, LE [1 ]
Prokhorov, KA [1 ]
机构
[1] Russian Acad Sci, Inst Gen Phys, Moscow 119991, Russia
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中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A theoretical treatment for the resonant second-order Raman scattering in semiconductors with equal effective masses of electrons and holes is presented. The Wannier excitons are considered as intermediate states. Expressions for the Raman efficiency are derived. The theoretical model developed can be applied for incident frequencies below and above an excitonic resonance.
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页码:349 / 354
页数:6
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