Improved aluminum-doped ZnO/metal back reflector for p-i-n amorphous silicon germanium thin film solar cells

被引:10
作者
Wang, G. H. [1 ]
Shi, C. Y. [2 ]
Zhao, L. [1 ]
Yan, B. J. [1 ]
Wang, G. [1 ]
Chen, J. W. [1 ]
Li, Z. C. [1 ]
Diao, H. W. [1 ]
Wang, W. J. [1 ]
机构
[1] Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China
[2] China Acad Res MIIT, China Telecommun Technol Labs, Informat & Post & Telecommun Ind Prod Qual Survei, Beijing 100015, Peoples R China
关键词
a-SiGe:H; Solar cell; Aluminum-doped zinc oxide; Metal back reflector; Nickel chromium; Diffusion barrier; Sputtering; ZNO-AL FILMS; BARRIERS;
D O I
10.1016/j.tsf.2013.01.059
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Different aluminum-doped ZnO (AZO)/metal composite films, including AZO/Al, AZO/Ag/Al and AZO/Ag/NiCr/Al, were utilized as the back reflectors for p-i-n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells. It was found that AZO/Al had a better performance than single Al electrode and the thickness of AZO film could strongly affect the short-circuit current density (J(sc)) of the solar cells. However, AZO/Ag/Al, which was expected to improve the back reflectance further, gave out a bad effect, due to the inter diffusion of Ag and Al. While a nickel-chromium (NiCr) film was inserted between Ag and Al as a diffusion barrier, the highest J(sc) was achieved. So AZO/Ag/NiCr/Al could be utilized as an improved AZO/metal back reflector for p-i-n a-SiGe: H solar cells. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:591 / 593
页数:3
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