Theoretical model for adsorption of Sb on the GaAs(110) surface

被引：1
|
作者：
Mendoza, BS [1 ]
Arzate, N [1 ]
Vázquez-Nava, RA [1 ]
机构：
[1] Ctr Invest Opt AC, Photon Dept, Guanajuato, Mexico
来源：
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2 , NO 12 | 2005年 / 2卷 / 12期
关键词：
D O I：
10.1002/pssc.200562245
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a model for studying the adsorption of Sb atoms on the clean GaAs(110) surface and analyse the consequences of the adsorption on the reflectance anisotropy spectroscopy (RAS). A 1 x 8 unit cell is taken as a basis of the Sb-covered GaAs(110) structure. We allow the Sb-covered surface to be disordered by letting every surface atom move freely around its equilibrium position. In order to obtain a representative RAS spectrum of the surface we generate an ensemble with N different structural realizations of the surface and the ensemble RAS average is performed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4031 / 4036
页数：6
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