Miniaturized SIW filter using D-shaped resonators with wide out-of-band rejection for 5G applications

被引:12
作者
Duraisamy, Tharani [1 ]
Barik, Rusan Kumar [2 ]
Cheng, Qingsha S. [2 ,3 ]
Kamakshy, Selvajyothi [1 ]
Subramanian, Karthikeyan Sholampettai [4 ]
机构
[1] IIITD & M Kancheepuram, Dept Elect & Commun Engn, Chennai, Tamil Nadu, India
[2] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518005, Peoples R China
[3] Southern Univ Sci & Technol, Univ Key Lab Adv Wireless Commun Guangdong Prov, Shenzhen, Peoples R China
[4] NIT, Dept Elect & Commun Engn, Tiruchirappalli, India
基金
中国国家自然科学基金;
关键词
Substrate integrated waveguide; filter; D-shaped resonator; wide stopband;
D O I
10.1080/09205071.2020.1816219
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, substrate integrated waveguide (SIW) filter with compact size and wide out-of-band rejection is designed for 5G (sub-6 GHz) applications. To achieve the proposed filter responses, D-shaped resonators oriented face-to-face are etched out on the top layer of SIW. Due to the resonators loading, the filter provides a passband below the cut-off frequency of SIW. This decrease in the operating frequency of the filter allows us to achieve size miniaturization. To enhance the frequency responses, a double-stage SIW filter is proposed and investigated. The equivalent electrical-circuits are developed to validate the transmission responses. To support our claim, single- and double-stage SIW filters are designed, fabricated and tested. The filter prototypes achieve size miniaturization, low insertion loss and wide out-of-band responses. The measured responses are very similar to the full-wave simulation responses.
引用
收藏
页码:2397 / 2409
页数:13
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