Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

被引：197

作者：

Horzum, S. ^{[1
,2
]}

Sahin, H. ^{[1
]}

Cahangirov, S. ^{[3
,4
]}

Cudazzo, P. ^{[3
,4
]}

Rubio, A. ^{[3
,4
]}

Serin, T. ^{[2
]}

Peeters, F. M. ^{[1
]}

机构：

[1] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium

[2] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey

[3] Univ Basque Country, Dept Fis Mat, Nanobio Spect Grp, CSIC UPV,EHU MPC,Ctr Fis Mat, E-20018 San Sebastian, Spain

[4] DIPC, E-20018 San Sebastian, Spain

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 12期

关键词：

GREENS-FUNCTION; GRAPHENE;

D O I：

10.1103/PhysRevB.87.125415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Motivated by recent experimental observations of Tongay et al. [Nano Lett. 12, 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found that with increasing strain: (1) the E' and E '' Raman peaks (E-2g and E-1g in bulk) exhibit significant redshifts (up to similar to 30 cm(-1)), (2) the position of the A'(1) peak remains at similar to 180 cm(-1) (A(1g) in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear, and (4) the electronic band structure undergoes a direct to indirect band gap crossover under similar to 3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational, and optical properties of single layer MoSe2 and similar MX2 dichalcogenides. DOI:10.1103/PhysRevB.87.125415

引用

页数：5

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