Investigation of the Meyer-Neldel compensation rule in binary selenium-based amorphous semiconductors

被引:3
|
作者
Kotkata, M. F. [1 ]
Mansour, Sh. A. [2 ]
机构
[1] Ain Shams Univ, Fac Sci, Semicond Technol Lab, Cairo 11566, Egypt
[2] Menoufia Univ, Fac Engn, Basic Engn Sci Dept, Shibin Al Kawm, Egypt
关键词
Meyer-Neldel rule; Electronic transport; Amorphous semiconductors; Chalcogenides; Multi-excitations entropy; SHORT-RANGE ORDER; ELECTRICAL-PROPERTIES; LOCALIZED STATES; POLARON MOTION; CONDUCTIVITY; DENSITY; FILMS; TRANSPORT; IMPURITY; ALLOYS;
D O I
10.1016/j.jnoncrysol.2012.08.012
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper contributes to a series of work analyzing the Meyer-Neldel compensation rule (MNCR) for various binary Se-based amorphous semiconductor systems. These systems are classified into two groups relying on the coordination number of the stoichiometric compound in each of the binary systems (< r > = 2.4 and 2.4 < r ><= 2.67). The estimated shift in the Fermi level of the investigated materials declares the physical basis of the MNCR behavior for DC conductivity where the activation energies (Delta E) are commonly measured around and above room-temperature. Also, the obtained MN energy (E-MN) values, supporting the electronic polaron hopping model resulted from the carrier-induced softening vibrations, provide a clearer physical picture for origin of the rule. In this consensus, one can realize the concept of multiple excitations entropy, that reserved for the large vibrations accompanied large Delta E, dominates the correlation between the two MNCR parameters (true pre-factor sigma(00) and E-MN) for all investigated systems in both groups. (C) 2012 Elsevier B.V. All rights reserved.
引用
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页码:3342 / 3347
页数:6
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