Implanted p-n junctions in GaN

被引：16

作者：

Cao, XA

LaRoche, JR

Ren, F ^{[1
]}

Pearton, SJ

Lothian, JR

Singh, RK

Wilson, RG

Guo, HJ

Pennycook, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Multiplex Inc, S Plainfield, NJ 07080 USA

[4] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(99)00012-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si-29(+) ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100 degrees C was used to create n(+)/p junctions. The junction ideality factor was similar to 2, indicative of a high density of generation-recombination centers, and the breakdown voltage was 13 V at 5.1 x 10(-4) A cm(-2) Transmission electron microscopy revealed a high density (> 10(10) cm(-2)) of implantation damage-related dislocations in the material, due to incomplete annealing of displaced lattice atoms. Higher annealing temperatures and improved junction passivation are needed for improved stand-off voltages. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1235 / 1238

页数：4

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