Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers

被引：10

作者：

Salditt, T

Lott, D

Metzger, TH

Peisl, J

Fischer, R

Zweck, J

Hoghoj, P

Scharpf, O

Vignaud, G

机构：

[1] UNIV REGENSBURG,INST PHYS EXPT,D-93040 REGENSBURG,GERMANY

[2] INST MAX VON LAUE PAUL LANGEVIN,F-38043 GRENOBLE,FRANCE

[3] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

来源：

EUROPHYSICS LETTERS | 1996年 / 36卷 / 08期

关键词：

D O I：

10.1209/epl/i1996-00270-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the interfacial roughness of a W/Si multilayer sputtered at high Ar gas pressure. The roughness exponents as determined from diffuse X-ray scattering agree well with the Huygens-principle growth model proposed by Tang, Alexander and Bruinsma (TAB). Simple microscopic explanations are given to account for the finding of Edwards-Wilkinson (EW) type growth at low Ar pressure and the TAB growth mechanism at high pressures, as well as for the absence of any scaling according to the Kardar-Parisi-Zhang (KPZ) equation.

引用

页码：565 / 570

页数：6

共 27 条

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