Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers

被引：10
|
作者：
Salditt, T
Lott, D
Metzger, TH
Peisl, J
Fischer, R
Zweck, J
Hoghoj, P
Scharpf, O
Vignaud, G
机构：
[1] UNIV REGENSBURG,INST PHYS EXPT,D-93040 REGENSBURG,GERMANY
[2] INST MAX VON LAUE PAUL LANGEVIN,F-38043 GRENOBLE,FRANCE
[3] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE
来源：
EUROPHYSICS LETTERS | 1996年 / 36卷 / 08期
关键词：
D O I：
10.1209/epl/i1996-00270-x
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the interfacial roughness of a W/Si multilayer sputtered at high Ar gas pressure. The roughness exponents as determined from diffuse X-ray scattering agree well with the Huygens-principle growth model proposed by Tang, Alexander and Bruinsma (TAB). Simple microscopic explanations are given to account for the finding of Edwards-Wilkinson (EW) type growth at low Ar pressure and the TAB growth mechanism at high pressures, as well as for the absence of any scaling according to the Kardar-Parisi-Zhang (KPZ) equation.
引用
收藏
页码：565 / 570
页数：6
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