Doping effects of Mg for In on the thermoelectric properties of β-In2S3 bulk samples
被引:13
作者:
Chen, Yue Xing
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South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Toyota Technol Inst, Nagoya, Aichi 4688511, JapanSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Chen, Yue Xing
[1
,2
]
Yamamoto, Akio
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Toyota Technol Inst, Nagoya, Aichi 4688511, JapanSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Yamamoto, Akio
[2
]
Takeuchi, Tsunehiro
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机构:
Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
Japan Sci & Technol Agcy, PRESTO, Tokyo 1020076, Japan
Nagoya Univ, Japan GREMO, Nagoya, Aichi 4648603, JapanSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Takeuchi, Tsunehiro
[2
,3
,4
]
机构:
[1] South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020076, Japan
[4] Nagoya Univ, Japan GREMO, Nagoya, Aichi 4648603, Japan
beta-In2S3 was developed as a potential thermoelectric material both experimental and computational. In this work, Mg doped In2S3 samples were prepared by conventional solid-state reaction method followed by pulsed current sintering. For In2-xMgxS3 (0 <= x <= 0.20), the prepared samples maintains tetragonal beta-In2S3 phase while alpha-In2S3 with cubic structure were obtained at x >= 0.30. The both Mg and S concentrations were less than the nominal values, and the lack of S naturally lead to an effective increase of electron concentration in the bands crossing the Fermi level. The lattice thermal conductivity was reduced by the Mg-substitution, and the value of ZT reached 0.53 at 700 K for x = 0.05, which is 1.4 times larger than that of non-doped sample. (C) 2016 Elsevier B.V. All rights reserved.
机构:
Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Morelli, D. T.
Jovovic, V.
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Ohio State Univ, Dept Mech Engn, Columbus, OH 43210 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Jovovic, V.
Heremans, J. P.
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机构:
Ohio State Univ, Dept Mech Engn, Columbus, OH 43210 USA
Ohio State Univ, Dept Phys, Columbus, OH 43210 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
机构:
Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Morelli, D. T.
Jovovic, V.
论文数: 0引用数: 0
h-index: 0
机构:
Ohio State Univ, Dept Mech Engn, Columbus, OH 43210 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Jovovic, V.
Heremans, J. P.
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h-index: 0
机构:
Ohio State Univ, Dept Mech Engn, Columbus, OH 43210 USA
Ohio State Univ, Dept Phys, Columbus, OH 43210 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA