Doping effects of Mg for In on the thermoelectric properties of β-In2S3 bulk samples

被引:13
作者
Chen, Yue Xing [1 ,2 ]
Yamamoto, Akio [2 ]
Takeuchi, Tsunehiro [2 ,3 ,4 ]
机构
[1] South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020076, Japan
[4] Nagoya Univ, Japan GREMO, Nagoya, Aichi 4648603, Japan
关键词
Indium sulfide; Thermoelectric; Mg doping; ZT; ELECTRICAL-PROPERTIES; THERMAL-CONDUCTIVITY; PERFORMANCE; FIGURE; MERIT;
D O I
10.1016/j.jallcom.2016.10.309
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
beta-In2S3 was developed as a potential thermoelectric material both experimental and computational. In this work, Mg doped In2S3 samples were prepared by conventional solid-state reaction method followed by pulsed current sintering. For In2-xMgxS3 (0 <= x <= 0.20), the prepared samples maintains tetragonal beta-In2S3 phase while alpha-In2S3 with cubic structure were obtained at x >= 0.30. The both Mg and S concentrations were less than the nominal values, and the lack of S naturally lead to an effective increase of electron concentration in the bands crossing the Fermi level. The lattice thermal conductivity was reduced by the Mg-substitution, and the value of ZT reached 0.53 at 700 K for x = 0.05, which is 1.4 times larger than that of non-doped sample. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:1631 / 1636
页数:6
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