Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

被引：17

作者：

Kim, D-H ^{[1
]}

del Alamo, J. A. ^{[2
]}

Antoniadis, D. A. ^{[2
]}

Li, J. ^{[3
]}

Kuo, J-M ^{[3
]}

Pinsukanjana, P. ^{[3
]}

Kao, Y-C ^{[3
]}

Chen, P. ^{[1
]}

Papavasiliou, A. ^{[1
]}

King, C. ^{[1
]}

Regan, E. ^{[1
]}

Urteaga, M. ^{[1
]}

Brar, B. ^{[1
]}

Kim, T-W ^{[4
]}

机构：

[1] Teledyne Sci Co, Thousand Oaks, CA 91360 USA

[2] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

[3] Intelligent Epitaxy Technol, Richardson, TX 75081 USA

[4] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

MOSFET;

D O I：

10.1063/1.4769230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this Letter, we report on sub-100 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al2O3 layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An L-g = 60 nm MOSFET exhibits on-resistance (R-ON) = 220 Omega-mu m, subthreshold-swing (S) = 110 mV/decade, and drain-induced-barrier-lowering (DIBL) = 200 mV/V at V-DS = 0.5V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (g(m_max)) 2000 mu s/mu m and current-gain cutoff frequency (f(T)) 370 GHz at V-DS = 0.5V, in any III-V MOSFET technology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769230]

引用

页数：4

共 13 条

[1] Lattice-Mismatched In0.4Ga0.6As Source/Drain Stressors With In Situ Doping for Strained In0.53Ga0.47As Channel n-MOSFETs [J].