Improved binary collision approximation ion implant simulators

被引：43

作者：

Hernández-Mangas, JM ^{[1
]}

Arias, J ^{[1
]}

Bailón, L ^{[1
]}

Jaraíz, M ^{[1
]}

Barbolla, J ^{[1
]}

机构：

[1] Univ Valladolid, Dept Elect & Elect, E-47011 Valladolid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 02期

关键词：

D O I：

10.1063/1.1424052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An efficient binary collision approximation (BCA) ion implant code with good prediction capabilities for semiconductor materials (Si, GaAs, SiC) with only one fitting parameter for low implantation doses is presented. It includes specific interatomic potentials and recent improvements in physical models for inelastic stopping. A periodic ab initio full bond electron density for the target is used. Damage accumulation is supported using a modified Kinchin-Pease model [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955)]. Also, some of the BCA integration algorithms and target selection procedure have been refined. An algorithm commonly used for statistical noise reduction has been modified to also improve the noise reduction in the lateral and shallow zones. The agreement with experiments is good, even under channeling conditions and for different target materials. A comparison with experimental secondary ion mass spectroscopy results for several projectiles and targets is presented. (C) 2002 American Institute of Physics.

引用

页码：658 / 667

页数：10

共 46 条

[1] EMPIRICAL DEPTH PROFILE SIMULATOR FOR ION-IMPLANTATION IN 6H-ALPHA-SIC [J].