Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO3 film and Ag nanoelectrodes

被引:54
作者
Gao, X. S. [1 ,2 ]
Liu, J. M. [2 ]
Au, K. [1 ]
Dai, J. Y. [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] S China Normal Univ, Inst Adv Mat, Guangzhou, Guangdong, Peoples R China
关键词
PEROVSKITE FILMS; WORK FUNCTION; THIN-FILMS; BARRIERS; ELECTRORESISTANCE; POLARIZATION; PHYSICS; STATES;
D O I
10.1063/1.4756918
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, Ag nanoisland electrodes (nanoelectrodes) have been deposited on top of ultrathin ferroelectric BaTiO3 (BTO) films to form a nanoscale metal-ferroelectric-metal tunnel junction by integrating growth techniques of nanocluster beam source and laser-molecular beam epitaxy. The ultrathin BTO films (similar to 3 nm thick) exhibit both apparent ferroelectric polarization reversal and ferroelectric tunneling related resistive switching behaviors. The introducing of Ag nanoislands (similar to 20 nm in diameter) as top electrode substantially enhances the tunneling current and alters the symmetry of I-V hysteresis curves. The enhanced tunneling current is likely due to the reduction in tunneling barrier height and an increase in effective tunneling area by Ag nano-electrodes, while the improved symmetric in I-V curve may be attributed to the variation of electrode-oxide contact geometry. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756918]
引用
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页数:5
相关论文
共 32 条
[1]   TUNNELING CONDUCTANCE OF ASYMMETRICAL BARRIERS [J].
BRINKMAN, WF ;
DYNES, RC ;
ROWELL, JM .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1915-&
[2]   Two-dimensional ferroelectric films [J].
Bune, AV ;
Fridkin, VM ;
Ducharme, S ;
Blinov, LM ;
Palto, SP ;
Sorokin, AV ;
Yudin, SG ;
Zlatkin, A .
NATURE, 1998, 391 (6670) :874-877
[3]  
Chanthbouala A, 2012, NAT NANOTECHNOL, V7, P101, DOI [10.1038/nnano.2011.213, 10.1038/NNANO.2011.213]
[4]   Enhancement of ferroelectricity in strained BaTiO3 thin films [J].
Choi, KJ ;
Biegalski, M ;
Li, YL ;
Sharan, A ;
Schubert, J ;
Uecker, R ;
Reiche, P ;
Chen, YB ;
Pan, XQ ;
Gopalan, V ;
Chen, LQ ;
Schlom, DG ;
Eom, CB .
SCIENCE, 2004, 306 (5698) :1005-1009
[5]   Resistive switching in metal-ferroelectric-metal junctions [J].
Contreras, JR ;
Kohlstedt, H ;
Poppe, U ;
Waser, R ;
Buchal, C ;
Pertsev, NA .
APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597
[6]   Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers [J].
Crassous, A. ;
Garcia, V. ;
Bouzehouane, K. ;
Fusil, S. ;
Vlooswijk, A. H. G. ;
Rispens, G. ;
Noheda, B. ;
Bibes, M. ;
Barthelemy, A. .
APPLIED PHYSICS LETTERS, 2010, 96 (04)
[7]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130
[8]  
Esaki L., 1971, IBM Tech. Discl. Bull, V13, P2161
[9]   Ferroelectricity in ultrathin perovskite films [J].
Fong, DD ;
Stephenson, GB ;
Streiffer, SK ;
Eastman, JA ;
Auciello, O ;
Fuoss, PH ;
Thompson, C .
SCIENCE, 2004, 304 (5677) :1650-1653
[10]   Tunnel junctions with multiferroic barriers [J].
Gajek, Martin ;
Bibes, Manuel ;
Fusil, Stephane ;
Bouzehouane, Karim ;
Fontcuberta, Josep ;
Barthelemy, Agnes ;
Fert, Albert .
NATURE MATERIALS, 2007, 6 (04) :296-302