Probing the Nature of Defects in Graphene by Raman Spectroscopy

被引：1820
作者：
Eckmann, Axel [1 ,2 ]
Felten, Alexandre [3 ,4 ]
Mishchenko, Artem [5 ]
Britnell, Liam [5 ]
Krupke, Ralph [4 ]
Novoselov, Kostya S. [5 ]
Casiraghi, Cinzia [1 ,2 ,3 ]
机构：
[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England
[3] Free Univ Berlin, Dept Phys, Berlin, Germany
[4] Karlsruhe Inst Technol, Karlsruhe, Germany
[5] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
来源：
NANO LETTERS | 2012年 / 12卷 / 08期
基金：
瑞士国家科学基金会;
关键词：
Graphene; Raman spectroscopy; defects; conductive AFM; BALLISTIC TRANSPORT; DISORDER;
D O I：
10.1021/nl300901a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (similar to 13) for sp(3)-defects, it decreases for vacancy-like defects (similar to 7), and it reaches a minimum for boundaries in graphite (similar to 3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
引用
收藏
页码：3925 / 3930
页数：6
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