Probing the Nature of Defects in Graphene by Raman Spectroscopy

被引：1813

作者：

Eckmann, Axel ^{[1
,2
]}

Felten, Alexandre ^{[3
,4
]}

Mishchenko, Artem ^{[5
]}

Britnell, Liam ^{[5
]}

Krupke, Ralph ^{[4
]}

Novoselov, Kostya S. ^{[5
]}

Casiraghi, Cinzia ^{[1
,2
,3
]}

机构：

[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[3] Free Univ Berlin, Dept Phys, Berlin, Germany

[4] Karlsruhe Inst Technol, Karlsruhe, Germany

[5] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

来源：

NANO LETTERS | 2012年 / 12卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

Graphene; Raman spectroscopy; defects; conductive AFM; BALLISTIC TRANSPORT; DISORDER;

D O I：

10.1021/nl300901a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (similar to 13) for sp(3)-defects, it decreases for vacancy-like defects (similar to 7), and it reaches a minimum for boundaries in graphite (similar to 3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.

引用

页码：3925 / 3930

页数：6

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