Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

被引：89

作者：

Zhou, Guangdong ^{[1
,2
]}

Yang, Xiude ^{[2
]}

Xiao, Lihua ^{[1
]}

Sun, Bai ^{[3
]}

Zhou, Ankun ^{[4
,5
]}

机构：

[1] Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China

[2] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

[3] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China

[4] Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Yunnan, Peoples R China

[5] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 16期

关键词：

MECHANISM;

D O I：

10.1063/1.5089147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors. Published under license by AIP Publishing.

引用

页数：5

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