Structural and optoelectronic properties of PbSxSe1-x, PbSxTe1-x and PbSexTe1-x via first-principles calculations

被引:19
作者
Naeemullah [1 ]
Murtaza, G. [2 ]
Khenata, R.
Hassan, N. [1 ]
Naeem, S. [2 ]
Khalid, M. N. [2 ]
Bin Omran, S. [3 ]
机构
[1] Hazara Univ, Mat Modeling Lab, Mansehra, Pakistan
[2] Islamia Coll Univ, Dept Phys, Mat Modeling Lab, Peshawar, Pakistan
[3] King Saud Univ, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
关键词
DFT; Lead chalcogenides; Covalent bonding; Band gap; Optical properties; IV-VI SEMICONDUCTORS; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; PHASE-TRANSITIONS; PBSE; DENSITIES; CRYSTALS;
D O I
10.1016/j.commatsci.2013.10.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using first-principle technique of full-potential linearized augmented plane-wave method, we have studied the structural, electronic and optical properties of PbSxSe1-x, PbSxTe1-x and PbSexTe1-x ternary alloys. For exchange-correlation potential the generalized gradient approximation (GGA) has been used. Lattice constants, bulk moduli, charge densities, density of states and band structures of parent binary compounds and their ternary alloys in the rocksalt structure are presented. The results reveal that the incorporation of 'S' and 'Se' atoms in PbSe, and PbTe reduces the band gaps. The bonding nature is studied via electron charge density plots. Absorption coefficient, optical conductivity and reflectivity are also discussed to exploit the interaction of these materials to photons in varied frequencies. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:496 / 503
页数:8
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