Spin and Charge Transport in a Magnetic Tunnel Junction with Magnetic Impurities Embedded in the Tunnel Barrier

被引:0
|
作者
Misiorny, M. [1 ,2 ,3 ]
Barnas, J. [3 ,4 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, S-41296 Gothenburg, Sweden
[2] Forschungszentrum Julich, Peter Grunberg Inst PGI 2, D-52425 Julich, Germany
[3] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland
[4] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
关键词
D O I
10.12693/APhysPolA.128.196
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electronic transport in a nanoscopic magnetic tunnel junction with magnetic particles or magnetic impurity atoms/molecules embedded in the barrier is studied theoretically. The impurity Hamiltonian includes magnetic anisotropy of easy axis type with additional perpendicular term. The description takes into account both elastic tunneling processes as well as inelastic processes associated with a flip of electron spin.
引用
收藏
页码:196 / 199
页数:4
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