Enhanced drift velocity of photoelectrons in a semiconductor with ultrafast carrier recombination

被引：14

作者：

Reklaitis, A

Krotkus, A

Grigaliünaitè, G

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Gediminas Tech Univ, LT-2040 Vilnius, Lithuania

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 10期

关键词：

D O I：

10.1088/0268-1242/14/10/311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown by Monte Carlo simulations that the electron velocity overshoot phenomenon in the transient response causes a significant enhancement of the steady-state electron drift velocity in semiconductors in which the electron recombination time is of the same order as the time of the electron transient response. The effect can take place in GaAs layers grown by molecular beam epitaxy at low temperatures.

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页码：945 / 947

页数：3

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