Developments in ultrashallow spreading resistance analysis

被引:3
作者
Dickey, DH [1 ]
机构
[1] Solecon Labs, San Jose, CA 95131 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 01期
关键词
D O I
10.1116/1.1446454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spreading resistance analysis on ultrashallow structures is complicated by the interaction of bevel rounding with geometric effects associated with lateral boundaries. When a spreading resistance probe is stepped from the original sample surface, across the rounded region at the bevel edge and onto the bevel, the resistance increases. Some of the increase is the result of approaching the lateral boundary represented by the bevel, and some is the result of increasing local sheet resistance as the probes begin to move below the original surface. We remove the geometric effect by solving the boundary value problem involving a sheet resistance which varies with distance along the direction of probe travel. Having obtained the local sheet resistance, we assign a depth for each point from profilometer data, and the usual depth-dependent analysis is used to obtain the resistivity profile. (C) 2002 American Vacuum Society.
引用
收藏
页码:467 / 470
页数:4
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