A single-electron hysteretic inverter designed for enhancement of stochastic resonance

被引：1

作者：

Huong, Tran T. T. ^{[1
,2
]}

Mizugaki, Yoshinao ^{[1
,2
]}

机构：

[1] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

[2] JST, CREST, Kawaguchi, Saitama 3220012, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 17期

关键词：

single-electron device; stochastic resonance; DEVICES;

D O I：

10.1587/elex.12.20150527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve stochastic resonance in a single-electron (SE) device, we propose an SE device having hysteretic characteristics. We first demonstrate by analyzing a mathematical model that the correlation coefficient between the subthreshold input and the inverter output is improved by introducing hysteresis into an ideal inverter (NOT gate). To realize hysteresis in an SE inverter, we have designed an SE device having hysteretic characteristics (2ID-FJI) by combining two input discretizers (IDs) and an SE four-junction inverter (FJI). Evaluations of the correlation coefficients prove that the 2ID-FJI can achieve a significant improvement in stochastic resonance.

引用

页数：12

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