A single-electron hysteretic inverter designed for enhancement of stochastic resonance

被引：1
|
作者：
Huong, Tran T. T. [1 ,2 ]
Mizugaki, Yoshinao [1 ,2 ]
机构：
[1] Univ Electrocommun, Chofu, Tokyo 1828585, Japan
[2] JST, CREST, Kawaguchi, Saitama 3220012, Japan
来源：
IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 17期
关键词：
single-electron device; stochastic resonance; DEVICES;
D O I：
10.1587/elex.12.20150527
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To improve stochastic resonance in a single-electron (SE) device, we propose an SE device having hysteretic characteristics. We first demonstrate by analyzing a mathematical model that the correlation coefficient between the subthreshold input and the inverter output is improved by introducing hysteresis into an ideal inverter (NOT gate). To realize hysteresis in an SE inverter, we have designed an SE device having hysteretic characteristics (2ID-FJI) by combining two input discretizers (IDs) and an SE four-junction inverter (FJI). Evaluations of the correlation coefficients prove that the 2ID-FJI can achieve a significant improvement in stochastic resonance.
引用
收藏
页数：12
相关论文
共 50 条
  • [1] STOCHASTIC RESONANCE IN A BALANCED PAIR OF SINGLE-ELECTRON BOXES
    Oya, Takahide
    Schmid, Alexandre
    Asai, Tetsuya
    Utagawa, Akira
    FLUCTUATION AND NOISE LETTERS, 2011, 10 (03): : 267 - 275
  • [2] Thermally driven single-electron stochastic resonance
    Kasai, Seiya
    NANOTECHNOLOGY, 2022, 33 (50)
  • [3] Carbon nanotube single-electron transistors with single-electron charge storages
    Seike, Kohei
    Kanai, Yasushi
    Ohno, Yasuhide
    Maehashi, Kenzo
    Inoue, Koichi
    Matsumoto, Kazuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (06)
  • [4] Modeling of single-electron tunneling networks for supersensitive sensors at room temperature
    Wu, Yangbing
    Zhao, Rujie
    Lu, Chao
    Guo, Donghui
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (01) : 222 - 233
  • [5] Nanosilicon for single-electron devices
    Mizuta, H
    Furuta, Y
    Kamiya, T
    Tan, YT
    Durrani, ZAK
    Amakawa, S
    Nakazato, K
    Ahmed, H
    CURRENT APPLIED PHYSICS, 2004, 4 (2-4) : 98 - 101
  • [6] Single-electron thermal noise
    Nishiguchi, Katsuhiko
    Ono, Yukinori
    Fujiwara, Akira
    NANOTECHNOLOGY, 2014, 25 (27)
  • [7] A diagrammatic approach to single-electron spintronics and a new analytical model for ferromagnetic single-electron transistors
    Ahmadian, Mehdi
    Sharifi, Mohammad Javad
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2019, 102 : 62 - 68
  • [8] A Universal Model for Single-Electron Device Simulation
    Abramov, I. I.
    Baranoff, A. L.
    Romanova, I. A.
    Shcherbakova, I. Y.
    INTERNATIONAL CONFERENCE MICRO- AND NANO-ELECTRONICS 2012, 2012, 8700
  • [9] Bottom-Up Single-Electron Transistors
    Makarenko, Ksenia S.
    Liu, Zhihua
    de Jong, Michel P.
    Zwanenburg, Floris A.
    Huskens, Jurriaan
    van der Wiel, Wilfred G.
    ADVANCED MATERIALS, 2017, 29 (42)
  • [10] Modeling of single-electron tunneling networks for supersensitive sensors at room temperature
    Yangbing Wu
    Rujie Zhao
    Chao Lu
    Donghui Guo
    Journal of Computational Electronics, 2020, 19 : 222 - 233
12345