Production and annealing behavior of lattice damage in energetic Kr and Ne-ion implanted 6H-SiC

被引：10
作者：
Meng, Yancheng [1 ,2 ]
Li, Jianjian [1 ,2 ]
Xu, Chaoliang [1 ,2 ]
Song, Yin [1 ]
Fu, Xin [3 ]
Ma, Tongda [3 ]
Zhang, Chonghong [1 ]
机构：
[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
[3] Gen Inst Nonferrous Met, Beijing 100088, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 307卷
基金：
中国国家自然科学基金;
关键词：
TEM; 6H-SiC; Defects; Amorphous; Recrystallization; TRANSMISSION ELECTRON-MICROSCOPY; INDENTATION;
D O I：
10.1016/j.nimb.2013.01.082
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In the present work, specimens of 6H-SiC were implanted with 5 MeV krypton ions and 2.3 MeV neon ions, to increasing fluences of 5 x 10(13), 2 x 10(14) x 10(15) ions/cm(2) for Kr-ion and to 3.75 x 10(15) ions/cm(2) for Ne-ion, respectively. The implanted specimens were then thermally annealed, in vacuum at the temperature 500, 700 and 1000 degrees C, respectively. In addition to the measurements with nanoindentation, XRD in our previous work [1], an investigation of the microstructures by using transmission electron microscopy (TEM) was carried out. The microstructures were observed to be dominated by simple defects, planar defects and crystal amorphization under different implantation dose. Recrystallization of the buried amorphous layer was observed after thermal annealing. Mechanisms underlying the changes of microstructures and their correlation with results from HRXRD and nano-indentation measurements are discussed. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码：552 / 557
页数：6
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