Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

被引:65
作者
Fengler, Franz P. G. [1 ]
Nigon, Robin [2 ]
Muralt, Paul [2 ]
Grimley, Everett D. [3 ]
Sang, Xiahan [4 ]
Sessi, Violetta [5 ]
Hentschel, Rico [1 ]
LeBeau, James M. [3 ]
Mikolajick, Thomas [5 ]
Schroeder, Uwe [1 ]
机构
[1] NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany
[2] Ecole Polytech Fed Lausanne, MX D Ecublens, Lab Ceram, CH-1015 Lausanne, Switzerland
[3] North Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA
[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[5] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany
基金
美国国家科学基金会;
关键词
electron trapping; ferroelectric; hafnium oxide; impedance spectroscopy; oxygen vacancies; thermally stimulated depolarization current; THIN-FILMS; RELAXATION; OXIDE;
D O I
10.1002/aelm.201700547
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstable ferroelectric response during field cycling. Different mechanisms are proposed to explain this instability including field-induced phase change, electron trapping, and oxygen vacancy diffusion. However, none of these is able to fully explain the complete behavior and interdependencies of these phenomena. Up to now, no complete root cause for fatigue, wake-up, and imprint effects is presented. In this study, the first evidence for the presence of singly and doubly positively charged oxygen vacancies in hafnia-zirconia films using thermally stimulated currents and impedance spectroscopy is presented. Moreover, it is shown that interaction of these defects with electrons at the interfaces to the electrodes may cause the observed instability of the ferroelectric performance.
引用
收藏
页数:11
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