Engineering phonon polaritons in van der Waals heterostructures to enhance in-plane optical anisotropy

被引:74
作者
Chaudhary, Kundan [1 ]
Tamagnone, Michele [1 ]
Rezaee, Mehdi [1 ,2 ]
Bediako, D. Kwabena [3 ]
Ambrosio, Antonio [4 ]
Kim, Philip [3 ]
Capasso, Federico [1 ]
机构
[1] Harvard Univ, Harvard John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Howard Univ, Dept Elect Engn, Washington, DC 20059 USA
[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[4] Harvard Univ, Ctr Nanoscale Syst, Cambridge, MA 02138 USA
基金
瑞士国家科学基金会;
关键词
PROPAGATION;
D O I
10.1126/sciadv.aau7171
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Van der Waals (vdW) heterostructures assembled from layers of two-dimensional materials have attracted considerable interest due to their novel optical and electrical properties. Here, we report a scattering-type scanning near-field opticalmicroscopy study of hexagonal boron nitride on black phosphorus (h-BN/BP) heterostructures, demonstrating the first direct observation of in-plane anisotropic phonon polariton modes in vdW heterostructures. Notably, the measured in-plane optical anisotropy along the armchair and zigzag crystal axes exceeds the ratio of refractive indices of BP in the x-y plane. We explain that this enhancement is due to the high confinement of the phonon polaritons in h-BN. We observe a maximum in-plane optical anisotropy of alpha(max) = 1.25 in the frequency spectrum at 1405 to 1440 cm(-1). These results provide new insights into the behavior of polaritons in vdW heterostructures, and the observed anisotropy enhancement paves the way to novel nanophotonic devices and to a new way to characterize optical anisotropy in thin films.
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页数:7
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