Micro-ultracapacitors with highly doped silicon nanowires electrodes

被引：50

作者：

Thissandier, Fleur ^{[1
,3
]}

Pauc, Nicolas ^{[3
]}

Brousse, Thierry ^{[3
,4
]}

Gentile, Pascal ^{[2
,3
]}

Sadki, Said ^{[1
,3
]}

机构：

[1] UJF, CNRS, CEA, Lab Mol Elect Organ & Hybrid LEMOH SPrAM UMR 5819, F-38054 Grenoble, France

[2] UMR E CEA UJF Grenoble 1, SiNaPS Lab SP2M, F-38054 Grenoble, France

[3] Commisioner Atom Energy & Alternat Energies CEA G, F-38054 Grenoble 9, France

[4] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

来源：

NANOSCALE RESEARCH LETTERS | 2013年 / 8卷

关键词：

Ultracapacitor; Electrochemical capacitor; Silicon nanowires electrodes; Chemical vapor deposition; Cyclic voltammetry; Galvanostatic charge/discharge; Microdevice; ELECTROCHEMICAL CAPACITORS; POROUS SILICON; SUPERCAPACITORS; CARBON; DEVICES; GROWTH;

D O I：

10.1186/1556-276X-8-38

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior in organic electrolyte (1 M NEt4BF4 in propylene carbonate). Their capacitance increases with the length of SiNWs on the electrode and has been improved up to 10 mu Fcm(-2) by using 20 mu m SiNWs, i.e., a parts per thousand 10-fold bulk silicon capacitance. This device exhibits promising galvanostatic charge/discharge cycling stability with a maximum power density of 1.4 mW cm(-2).

引用

页码：1 / 5

页数：5

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