Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion

被引：72
作者：
Ikoma, Yoshifumi [1 ]
Hayano, Kazunori [1 ]
Edalati, Kaveh [1 ,2 ]
Saito, Katsuhiko [3 ]
Guo, Qixin [3 ]
Horita, Zenji [1 ,2 ]
机构：
[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan
[2] Kyushu Univ, WPI, Int Inst Carbon Neutral Energy Res WPI I2CNER, Fukuoka 8190395, Japan
[3] Saga Univ, Dept Elect & Elect Engn, Synchrotron Light Applicat Ctr, Saga 8408502, Japan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 12期
关键词：
SEVERE PLASTIC-DEFORMATION; NANOSCALE PLASTICITY; METASTABLE PHASES; SI NANOCRYSTALS; NANOINDENTATION; TRANSITIONS; AMORPHIZATION; SPECTROSCOPY; TEMPERATURE; CONFINEMENT;
D O I：
10.1063/1.4754574
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si(100) wafers were subjected to severe plastic deformation under a pressure of 24 GPa using high-pressure torsion (HPT). Si wafers were plastically deformed at room temperature. HPT-processed samples were composed of metastable body centered cubic Si-III and rhombohedral Si-XII phases in the initial cubic diamond Si-I. The volume fraction of metastable phases increased with increasing plastic strain. Successive annealing at 873K led to the reverse transformation of metastable phases. A broad photoluminescence peak centered at about 650 nm appears due to the reverse transformation of Si-III/Si-XII nanograins and the reduction of number of defects in Si-I nanograins. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754574]
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页数：4
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