Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

被引：14

作者：

English, D. J. ^{[1
]}

Huebner, J. ^{[1
]}

Eldridge, P. S. ^{[2
]}

Taylor, D. ^{[3
]}

Henini, M. ^{[3
,5
]}

Harley, R. T. ^{[4
]}

Oestreich, M. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Solid State Phys, D-30167 Hannover, Germany

[2] IESL, Fdn Res & Technol, Iraklion 71110, Crete, Greece

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 4RD, England

[4] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England

[5] Nottingham Nanotechnol & Nanosci Ctr, Nottingham, England

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 07期

关键词：

ELECTRON G-FACTOR; RELAXATION; SPINTRONICS; ANISOTROPY; BEATS;

D O I：

10.1103/PhysRevB.87.075304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate Gamma(s) and the electron Lande g factor g* to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D-2d -> C-2v). However, by looking at the anisotropy of both Gamma(s) and g* simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest. DOI: 10.1103/PhysRevB.87.075304

引用

页数：5

共 27 条

[1]

Aronov A. G., 1983, Soviet Physics - JETP, V57, P680

[2] Giant spin relaxation anisotropy in zinc-blende heterostructures [J].

Averkiev, NS ;

Golub, LE .

PHYSICAL REVIEW B, 1999, 60 (23) :15582-15584

[3]

Bir G., 1974, Symmetry and Strain-Induced Effects in Semiconductors, P484

[4] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[5]

Dyakonov M, 2008, SPRINGER SER SOLID-S, V157

[6] Spin-orbit fields in asymmetric (001)-oriented GaAs/AlxGa1-xAs quantum wells [J].

Eldridge, P. S. ;

Huebner, J. ;

Oertel, S. ;

Harley, R. T. ;

Henini, M. ;

Oestreich, M. .

PHYSICAL REVIEW B, 2011, 83 (04)

[7] Rashba spin-splitting of electrons in asymmetric quantum wells [J].

Eldridge, P. S. ;

Leyland, W. J. H. ;

Lagoudakis, P. G. ;

Harley, R. T. ;

Phillips, R. T. ;

Winkler, R. ;

Henini, M. ;

Taylor, D. .

PHYSICAL REVIEW B, 2010, 82 (04)

[8] All-optical measurement of Rashba coefficient in quantum wells [J].

Eldridge, P. S. ;

Leyland, W. J. H. ;

Lagoudakis, P. G. ;

Karimov, O. Z. ;

Henini, M. ;

Taylor, D. ;

Phillips, R. T. ;

Harley, R. T. .

PHYSICAL REVIEW B, 2008, 77 (12)

[9] Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells [J].

English, D. J. ;

Lagoudakis, P. G. ;

Harley, R. T. ;

Eldridge, P. S. ;

Huebner, J. ;

Oestreich, M. .

PHYSICAL REVIEW B, 2011, 84 (15)

[10]

Flatté ME, 2002, NANOSCI TECHNOL, P107

← 1 2 3 →